| Fiber-optic power monitoring | Average optical power | Silicon or InGaAs | 400–1100 nm for silicon 900–1700 nm for InGaAs | -40 to +10 dBm 0.1 µW to 10 mW | DC to 1 kHz | 0.5–3 mm diameter | Low dark current and stable responsivity | Use an optical filter or fiber-coupling structure when ambient light could affect the reading. |
| High-speed pulse detection | Fast optical pulses or digital optical signals | Silicon or InGaAs PIN diode | 400–1100 nm for silicon 900–1700 nm for InGaAs | -30 to +5 dBm 1 µW to 3 mW | 10 MHz to >1 GHz | 0.1–1 mm diameter | Low junction capacitance and short rise time | Minimize cable length and amplifier input capacitance because they reduce bandwidth. |
| Visible-light intensity measurement | Illuminance or relative light level | Silicon photodiode | 400–1100 nm Best response generally in the visible range | Approximately 1 nW to 1 mW | DC to 100 Hz | 2–10 mm diameter | High linearity and a response matched to the visible spectrum | A diffuser or calibrated optical filter may be needed for uniform angular and spectral response. |
| Ultraviolet monitoring | UV intensity or UV presence | UV-enhanced silicon or wide-bandgap diode | 200–400 nm | Approximately 10 nW to 100 µW | DC to 10 kHz | 0.5–5 mm diameter | UV sensitivity with controlled visible and infrared rejection | Check window material and package transmission because ordinary glass blocks much of the UV spectrum. |
| Near-infrared reflective sensing | Object presence, distance trend, or reflected intensity | Silicon or InGaAs | 850–1100 nm for silicon 1000–1700 nm for InGaAs | 1 µW to 10 mW at the detector | 1 kHz to 100 kHz | 0.5–3 mm diameter | Adequate sensitivity at the emitter wavelength and fast response | Account for target reflectivity, working distance, incidence angle, and background illumination. |
| Long-wavelength infrared detection | Thermal radiation or mid-infrared signal | Germanium, InAs, or extended InGaAs | 1–3.5 µm, depending on material and structure | Approximately 1 µW to 1 mW | DC to 10 kHz | 0.5–5 mm diameter | Spectral response, cooling requirement, and low noise | Verify the detector’s cutoff wavelength and temperature rating for the intended operating environment. |
| Precision scientific measurement | Absolute optical power or spectral intensity | Calibrated silicon or InGaAs PIN diode | Select according to the measurement band; common ranges are 400–1100 nm and 900–1700 nm | 10 pW to 10 mW | DC to 1 kHz | 1–10 mm diameter | Known responsivity, low noise, and traceable calibration | Include temperature compensation and verify linearity over the complete optical power range. |
| Harsh industrial monitoring | Light level, flame indication, or process feedback | Silicon or UV-enhanced diode with protective package | 200–1100 nm, depending on the process | 100 nW to 10 mW | DC to 10 kHz | 0.5–5 mm diameter | Temperature range, sealing, vibration resistance, and overload tolerance | Specify the ambient temperature, humidity, dust, chemical exposure, and required ingress protection before selecting the package. |